The crystallization behavior of amorphous nano regions (20–100 nm in diameter) embedded in a textured epitaxial Ge 2 Sb 2 Te 5 (GST) 25 nm thick film grown on a Si (1 1 1) substrate has been investigated in situ by transmission electron microscopy (TEM) analysis. The amorphous regions were obtained by irradiation with 30 keV Ge + at a fluence of 1.5 × 10 14 ions cm −2 of masked samples. The adopted configuration simulates the GST structure of a device in the RESET state, it is then of relevance for understanding their data retention characteristics. The in situ TEM analysis indicates that the amorphous to crystal transition for 20 nm dots is characterized by a growth velocity of 3.6 pm s − 1 at 75 °C, probably related to the external partially damaged area. At 90 °C annealing crystallization is completed for 20 nm dot. In the case of 50 and 100 nm diameter amorphous dots a growth velocity ...

中文翻译：

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Ge 2 Sb 2 Te 5外延薄层中纳米非晶区的结晶

已经通过透射法原位研究了嵌入在生长在Si（1 1 1）衬底上的25 nm厚的Ge 2 Sb 2 Te 5（GST）25 nm织构化外延膜中的非晶纳米区域（直径为20-100 nm）的结晶行为。电子显微镜（TEM）分析。通过以1.5×10 14离子cm -2的掩模样品辐照30 keV Ge +来获得非晶区。所采用的配置模拟了处于RESET状态的设备的GST结构，因此与了解其数据保留特性有关。原位TEM分析表明，20 nm点的无定形到晶体转变的特征是在75°C时3.6 pm s -1的生长速度，这可能与外部部分损坏的区域有关。在90°C退火完成20 nm点的结晶。