Hexagonal boron nitride ( ##IMG## [http://ej.iop.org/images/0022-3727/53/20/203001/dab70c6ieqn001.gif] ) is the isoelectronic but insulating counterpart of graphene. Like graphene it can easily be grown as high-quality nanotubes or as single layers on metal surfaces. Both materials can be exfoliated or transferred after single-layer growth from suitable substrates onto new surfaces. In view of electronic devices or optical sensors, for instance, the carrier dynamics in the conduction bands determine the device properties. The band edge of the unoccupied band structure of ##IMG## [http://ej.iop.org/images/0022-3727/53/20/203001/dab70c6ieqn002.gif] is dominated by two kinds of states, free-electron-like interlayer or interface states and a flat conduction band valley derived from ##IMG## [http://ej.iop.org/images/0022-3727/53/20/203001/dab70c6ieqn003.gif] -states. The measurement of excited states and excited-...

中文翻译：

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六方氮化硼单层中激发层间态的动力学

六方氮化硼（## IMG ## [http://ej.iop.org/images/0022-3727/53/20/203001/dab70c6ieqn001.gif]）是石墨烯的等电但绝缘的对应物。像石墨烯一样，它可以轻松地生长为高质量的纳米管或金属表面上的单层。单层生长后，两种材料都可以从合适的基材上剥离或转移到新的表面上。例如，鉴于电子设备或光学传感器，导带中的载流子动力学决定了设备的性能。## IMG ## [http://ej.iop.org/images/0022-3727/53/20/203001/dab70c6ieqn002.gif]的空闲频带结构的频带边缘由两种状态主导类电子的中间层或界面态，以及从## IMG ## [http：//ej.iop。org / images / 0022-3727 / 53/20/203001 / dab70c6ieqn003.gif]-状态。激发态和激发态的测量