Abstract We show that gallium pollution in an AIXTRON Close Coupled Showerhead (CCS) Metal-Organic Vapor Phase Epitaxy (MOVPE) reactor can strongly affect the growth process stability of InGaN layers. By comparing growth with and without gallium pollution from the showerhead, we find a decrease in the indium incorporation and an increase in layer thickness of up to three times when the pollution is present. This phenomenon varies with the quantity of gallium on the showerhead, with increased gallium due to thicker GaN growth causing a stronger effect. Higher TMIn flows also give a more pronounced effect. These data support our previous hypothesis of TMIn reacting with metallic gallium present on the showerhead surface to release TMGa, which is then incorporated as Ga into the grown layers. This study of the effect of gallium contamination on InGaN layers in CCS MOVPE reactors leads us to suggest that the growth in CCS reactors should be performed free from gallium pollution to give more stable and comprehensible results.

中文翻译：

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揭示在 CCS MOVPE 反应器中生长的 InGaN 外延层上不需要的 Ga 掺入效应

摘要 我们表明，AIXTRON 密耦合喷头 (CCS) 金属有机气相外延 (MOVPE) 反应器中的镓污染会强烈影响 InGaN 层的生长过程稳定性。通过比较有和没有来自淋浴喷头的镓污染的生长，我们发现当污染存在时，铟的结合减少，层厚度增加多达三倍。这种现象随着喷头上镓的数量而变化，由于更厚的 GaN 生长而增加的镓会导致更强的影响。更高的 TMIn 流量也会产生更显着的效果。这些数据支持我们之前的假设，即 TMIn 与存在于喷头表面的金属镓反应以释放 TMGa，然后将其作为 Ga 并入生长层。