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Enhancing Carrier Transport Properties of Melt-grown CsPbBr3 Single Crystals by Eliminating Inclusions
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2020-03-06 , DOI: 10.1021/acs.cgd.9b01616 Peng Zhang 1 , Qihao Sun 2 , Yadong Xu 2 , Xiang Li 1 , Lin Liu 1 , Guodong Zhang 1 , Xutang Tao 1
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2020-03-06 , DOI: 10.1021/acs.cgd.9b01616 Peng Zhang 1 , Qihao Sun 2 , Yadong Xu 2 , Xiang Li 1 , Lin Liu 1 , Guodong Zhang 1 , Xutang Tao 1
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All-inorganic perovskite CsPbBr3 has attracted intense attentions due to its inspiring optoelectronic properties and excellent stability. Growing large-size single crystals with high quality is vital both for the intrinsic property investigation and the high-performance device fabrication. Here, large-size CsPbBr3 single crystals (ϕ 30 mm × 100 mm) were grown by the modified Bridgman method. The surface morphologies of the as-grown CsPbBr3 single-crystal wafers were characterized by SEM, and inclusions with size of 1–2 μm were observed in the first-time grown crystal (labeled as CPB-1). By adopting a slower growth rate (0.2 mm/h) and cooling rate (5 °C/h) than that of CPB-1, the inclusions were eliminated in subsequent growth (labeled as CPB-2). The hole mobility-lifetime products were measured to be 3.92 × 10–3 and 1.46 × 10–2 cm2·V–1 for CPB-1 and CPB-2, respectively. The carrier mobility of CPB-2 was enhanced 1 order of magnitude from 10.1 ± 0.3 cm2·V–1·s–1 (CPB-1) to 101.3 ± 4.2 cm2·V–1·s–1 due to the elimination of inclusions. In addition, CPB-2 exhibited excellent α particles detection ability with the optimal energy resolution of 15.1% at −60 V bias. We provide an effective way to enhance the optoelectronic properties and device performance of melt-grown CsPbBr3 single crystal by preventing the formation of the inclusions.
中文翻译：
通过消除夹杂物提高熔体生长的CsPbBr 3单晶的载流子输运性质
全无机钙钛矿CsPbBr 3由于具有启发性的光电性能和出色的稳定性而备受关注。生长高质量的大尺寸单晶对于固有特性研究和高性能器件制造都至关重要。在此，通过改良的布里奇曼方法生长了大尺寸的CsPbBr 3单晶（ϕ 30 mm×100 mm）。生长的CsPbBr 3的表面形态SEM对单晶晶片进行了表征，在首次生长的晶体（标记为CPB-1）中观察到了1-2μm的夹杂物。通过采用比CPB-1慢的生长速率（0.2 mm / h）和冷却速率（5°C / h），消除了随后生长中的夹杂物（标记为CPB-2）。对于CPB-1和CPB-2，测得的空穴迁移率寿命产品分别为3.92×10 –3和1.46×10 –2 cm 2 ·V –1。CPB-2的载流子迁移率从10.1±0.3 cm 2 ·V –1 ·s –1（CPB-1）提高到11.3±4.2 cm 2 ·V –1 ·s –1 1个数量级由于消除了夹杂物。另外，CPB-2表现出出色的α粒子检测能力，在-60 V偏置下的最佳能量分辨率为15.1％。我们提供了一种有效的方法，可以通过防止夹杂物的形成来增强熔融生长的CsPbBr 3单晶的光电性能和器件性能。
更新日期：2020-04-23
中文翻译：
通过消除夹杂物提高熔体生长的CsPbBr 3单晶的载流子输运性质
全无机钙钛矿CsPbBr 3由于具有启发性的光电性能和出色的稳定性而备受关注。生长高质量的大尺寸单晶对于固有特性研究和高性能器件制造都至关重要。在此，通过改良的布里奇曼方法生长了大尺寸的CsPbBr 3单晶（ϕ 30 mm×100 mm）。生长的CsPbBr 3的表面形态SEM对单晶晶片进行了表征，在首次生长的晶体（标记为CPB-1）中观察到了1-2μm的夹杂物。通过采用比CPB-1慢的生长速率（0.2 mm / h）和冷却速率（5°C / h），消除了随后生长中的夹杂物（标记为CPB-2）。对于CPB-1和CPB-2，测得的空穴迁移率寿命产品分别为3.92×10 –3和1.46×10 –2 cm 2 ·V –1。CPB-2的载流子迁移率从10.1±0.3 cm 2 ·V –1 ·s –1（CPB-1）提高到11.3±4.2 cm 2 ·V –1 ·s –1 1个数量级由于消除了夹杂物。另外，CPB-2表现出出色的α粒子检测能力，在-60 V偏置下的最佳能量分辨率为15.1％。我们提供了一种有效的方法，可以通过防止夹杂物的形成来增强熔融生长的CsPbBr 3单晶的光电性能和器件性能。
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