Na_0.5Bi_4.5‐x Ce_x Ti₄O₁₅ (x  = 0, 0.02, 0.04, 0.06, 0.08, 0.10) lead‐free piezoelectric ceramics with high Curie temperatures are fabricated using the conventional solid‐phase method. The effects of the Ce content on the phase structures, morphologies, and electrical properties of the Na_0.5Bi_4.5‐x Ce_x Ti₄O₁₅ ceramics are systematically investigated. The appropriate content of Ce increases b/a and c/a and induces the distortion of the crystal structure. The increased b/a leads to a transverse asymmetry of the Na_0.5Bi_4.5‐x Ce_x Ti₄O₁₅ ceramics, which facilitates the dipole flipping, thus enhancing the piezoelectric properties (d ₃₃ = 20 pC/N). Although the improved c/a increases the degree of tetragonality of the Na_0.5Bi_4.5‐x Ce_x Ti₄O₁₅ ceramic, which decreases the Curie temperature (T _C), the T _C values of all samples are higher than 600°C, considerably higher than the practical application temperature. The Ce doping significantly reduces the dielectric loss of the sample and increases its dielectric performance. The improvements in electric properties by the cerium doping can expand its use in high‐temperature environments for oilfield logging, aerospace, and military applications.

中文翻译：

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居里温度高的Ce掺杂Na0.5Bi4.5Ti4O15压电陶瓷的结构和电性能

Na _0.5 Bi _{4.5- x} Ce _x Ti ₄ O ₁₅（x  = 0、0.02、0.04、0.06、0.08、0.10）使用传统的固相方法制造，具有高居里温度的无铅压电陶瓷。系统地研究了Ce含量对Na _0.5 Bi _{4.5‐ x} Ce _x Ti ₄ O ₁₅陶瓷的相结构，形貌和电性能的影响。铈的适当含量增加b / a和c / a并引起晶体结构的变形。增加的b / a导致Na _0.5 Bi _{4.5‐ x} Ce _x Ti ₄ O ₁₅陶瓷的横向不对称，这有利于偶极子翻转，从而增强了压电性能（d ₃₃  = 20 pC / N）。虽然改进的C / A增加了的Na的四方性程度_0.5的Bi _4.5〜X 铈_X 的Ti ₄ ø ₁₅的陶瓷，这降低了居里温度（Ť _Ç），则Ť _Ç所有样品的温度均高于600°C，远高于实际应用温度。Ce掺杂显着降低了样品的介电损耗并提高了其介电性能。铈掺杂对电性能的改善可以将其扩展用于油田测井，航空航天和军事应用的高温环境。