Self-powered photodetectors have triggered extensive attention in recent years due to the advantages of high sensitivity, fast response, low power consumption, high level of integration and wireless operation. To date, most self-powered photodetectors are implemented through the construction of either heterostructures or asymmetric electrode material contact, which are complex to process and costly to produce. Herein, for the first time, we achieved a self-powered operation by adopting a geometrical asymmetry in the device architecture, where a triangular non-layered 2D In₂S₃ flake with an asymmetric contact is combined with the traditional photogating effect. Importantly, the device achieves excellent photoresponsivity (740 mA W⁻¹), high detectivity (1.56 × 10¹⁰ Jones), and fast response time (9/10 ms) under zero bias. Furthermore, the asymmetric In₂S₃/Si photodetector manifests long-term stability. Even after 1000 cycles of operation, the asymmetric In₂S₃/Si device displays negligible performance degradation. In sum, the above results highlight a novel route towards self-powered photodetectors with high performance, simple processing and structure in the future.

中文翻译：

---

非对称接触感应自供电2D In2S3光电探测器对高灵敏度和快速响应

自供电光电探测器由于具有高灵敏度，快速响应，低功耗，高集成度和无线操作的优势，近年来引起了广泛的关注。迄今为止，大多数自供电光电探测器都是通过异质结构或不对称电极材料触点的构造来实现的，这些过程工艺复杂且生产成本高。在这里，我们首次通过在器件架构中采用几何不对称性实现了自供电操作，其中具有不对称接触的三角形非分层2D In ₂ S ₃薄片与传统的光闸效应相结合。重要的是，该器件具有出色的光响应性（740 mA W ^-1），高检测灵敏度（1.56×10 ¹⁰ Jones）和零偏置下的快速响应时间（9/10 ms）。此外，不对称的In ₂ S ₃ / Si光电探测器具有长期稳定性。即使经过1000个工作周期，非对称In ₂ S ₃ / Si器件的性能下降也可以忽略不计。总而言之，以上结果突显了未来向高性能，简单工艺和结构的自供电光电探测器的新颖途径。