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Study of the Ti/InGaAs solid-state reactions: Phase formation sequence and diffusion schemes
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.mssp.2020.105038
S. Bensalem , E. Ghegin , F. Boyer , J.L. Lábár , M. Menyhárd , P. Gergaud , F. Nemouchi , Ph. Rodriguez

Abstract The development of Complementary Metal Oxide Semiconductor (CMOS)-compatible contact technology on III–V materials based on Ti for electronics or photonics applications was studied. In this framework, solid-state reactions between Ti thin films (20 nm) and In0.53Ga0.47As layers grown on InP substrates were studied from the as-deposited state up to 550 °C using a combination of advanced X-ray diffraction (in-plane reciprocal space mapping), Auger electron spectroscopy and transmission electron microscopy analyses. The phase formation sequence was solved. At low temperature, an amorphous Ti–Ga–As intermixing layer coexists with the Ti film. As of 250 °C, the first crystalline phase to form is Ti 2 Ga 3 . At 300 °C, a new crystalline phase appears, namely TiAs 2 . On the other hand, TiAs and metallic In form at 350 °C and Ti is completely consumed between 450 and 500 °C. The diffusion of the various species lead to the formation of a non-nominal Ga-rich In x Ga 1−x As layer and at 550 °C to the formation of polycrystalline GaAs. Ti was found to be the main diffusing species at low temperature whereas III and V elements are the dominant diffusing species at higher temperatures. The nature of the phases formed above and below the original Ti/InGaAs interface might explain the In accumulation at the interface, the TiAs phase acting as a diffusion barrier.

中文翻译:

Ti/InGaAs 固态反应的研究:相形成顺序和扩散方案

摘要 研究了用于电子或光子学应用的基于 Ti 的 III-V 族材料的互补金属氧化物半导体 (CMOS) 兼容接触技术的发展。在这个框架中,使用先进的 X 射线衍射的组合研究了从沉积态到 550°C 的 Ti 薄膜(20 nm)和在 InP 衬底上生长的 In0.53Ga0.47As 层之间的固态反应(平面倒易空间映射)、俄歇电子能谱和透射电子显微镜分析。解决了相形成顺序。在低温下,非晶 Ti-Ga-As 混合层与 Ti 膜共存。在 250 °C 时,形成的第一个晶相是 Ti 2 Ga 3 。在 300 °C 时,出现新的结晶相,即 TiAs 2 。另一方面,TiAs 和金属 In 在 350 °C 时形成,Ti 在 450 到 500 °C 之间完全消耗。各种物质的扩散导致形成非标称的富含 Ga 的 In x Ga 1-x As 层,并在 550 °C 形成多晶 GaAs。发现 Ti 是低温下的主要扩散物质,而 III 和 V 元素是高温下的主要扩散物质。在原始 Ti/InGaAs 界面上方和下方形成的相的性质可以解释界面处的 In 积累,TiAs 相充当扩散屏障。发现 Ti 是低温下的主要扩散物质,而 III 和 V 元素是高温下的主要扩散物质。在原始 Ti/InGaAs 界面上方和下方形成的相的性质可以解释界面处的 In 积累,TiAs 相充当扩散屏障。发现 Ti 是低温下的主要扩散物质,而 III 和 V 元素是高温下的主要扩散物质。在原始 Ti/InGaAs 界面上方和下方形成的相的性质可以解释界面处的 In 积累,TiAs 相充当扩散屏障。
更新日期:2020-07-01
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