Abstract The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at low Si-ion implantation fluences.

中文翻译：

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掺磷金刚石中的硅空位色心

摘要 磷掺杂（n 型）金刚石中色心的受控创建可以促进量子光子学器件的电子集成，例如在电注入时运行的单光子源。硅空位 (SiV) 色心是有希望的候选者，但到目前为止，尚未研究磷掺杂金刚石中单光子发射的条件。在这项研究中，我们在具有不同磷浓度的金刚石样品中创建了 SiV 色心，并表明可以显着抑制由于掺杂、氮杂质和离子注入引起的缺陷引起的荧光背景。在低硅离子注入通量下获得掺磷金刚石中的单光子发射器。