Indium-doped TiO₂ photoanode for dye-sensitized solar cells are prepared using a simple surface-doping technique by soaking the TiO₂ film in acidic In³⁺ solution at 70 °C for 30, 45 and 60 min followed by sintering at 450 °C. Structural characterization of In-doped TiO₂ films by SEM, TEM, EDX, XRD and Raman spectroscopy revealed the successful attachment of Indium to the surface of TiO₂ and that the amount of In dopant is proportional to the soaking time. The PCE of the devices fabricated from In-doped TiO₂ with a soaking time of 30 min produced an increase of 18.0 % compared to the undoped cells. Charge extraction analysis at open-circuit revealed that surface-doping with indium shifts TiO₂ band edge downward. However, the increase in V_OC was found as the net effect of negative movement of CB and retarded recombination caused by TiO₂ surface passivation via the In dopant.

使用简单的表面掺杂技术，通过将TiO ₂薄膜在70°C的酸性In ³⁺溶液中浸泡30、45和60分钟，然后在450°烧结，使用简单的表面掺杂技术制备用于染料敏化太阳能电池的铟掺杂TiO _2光阳极。C。通过SEM，TEM，EDX，XRD和拉曼光谱对In掺杂的TiO ₂薄膜进行结构表征表明，铟成功地附着在TiO ₂的表面，并且In掺杂剂的量与浸泡时间成正比。由In掺杂TiO ₂制成的器件的PCE与未掺杂的电池相比，浸泡时间为30分钟的电池的产量增加了18.0％。开路时的电荷提取分析表明，铟的表面掺杂使TiO _2的能带边缘向下移动。然而，发现V _OC的增加是CB负向运动和因TiO ₂表面通过In掺杂剂钝化而导致复合延迟的净效应。