Implanted positive muons with low energies (in the range 1-30 keV) are extremely useful local probes in the study of thin films and multi-layer structures. The average muon stopping depth, typically in the order of tens of nanometers, is a function of the muon implantation energy and of the density of the material, but the stopping range extends over a broad region, which is also in the order of tens of nanometers. Therefore, an adequate simulation procedure is required in order to extract the depth dependence of the experimental parameters. Here, we present a method to extract depth-resolved information from the implantation energy dependence of the experimental parameters in a low-energy muon spin spectroscopy experiment. The method and corresponding results are exemplified for a semiconductor film, Cu(In,Ga)Se2, covered with a thin layer of Al2O3, but can be applied to any heterostructure studied with low-energy muons. It is shown that if an effect is present in the experimental data, this method is an important tool to identify its location and depth extent.

中文翻译：

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薄膜中的介子注入实验：获取深度分辨信息

低能量（在 1-30 keV 范围内）注入的正 μ 子是薄膜和多层结构研究中非常有用的局部探针。平均 μ 子停止深度，通常在几十纳米的数量级，是 μ 子注入能量和材料密度的函数，但停止范围扩展到一个很宽的区域，这也是在几十纳米的数量级纳米。因此，需要一个足够的模拟程序来提取实验参数的深度依赖性。在这里，我们提出了一种从低能μ子自旋光谱实验中实验参数的注入能量依赖性中提取深度分辨信息的方法。该方法和相应的结果以半导体薄膜 Cu(In,Ga)Se2 为例，覆盖着一层薄薄的 Al2O3，但可以应用于任何用低能 μ 子研究的异质结构。结果表明，如果实验数据中存在效应，则该方法是识别其位置和深度范围的重要工具。