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High-performance n- and p-type organic single-crystal field-effect transistors with an air-gap dielectric towards anti-ambipolar transport
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020/03/04 , DOI: 10.1039/d0tc00546k Jianghong Liu 1, 2, 3, 4, 5 , Jie Liu 6, 7, 8, 9, 10 , Jing Zhang 6, 7, 8, 9, 10 , Chunlei Li 6, 7, 8, 9, 10 , Qiuhong Cui 1, 2, 3, 4, 5 , Feng Teng 1, 2, 3, 4, 5 , Hongxiang Li 5, 11, 12, 13, 14 , Lang Jiang 6, 7, 8, 9, 10
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020/03/04 , DOI: 10.1039/d0tc00546k Jianghong Liu 1, 2, 3, 4, 5 , Jie Liu 6, 7, 8, 9, 10 , Jing Zhang 6, 7, 8, 9, 10 , Chunlei Li 6, 7, 8, 9, 10 , Qiuhong Cui 1, 2, 3, 4, 5 , Feng Teng 1, 2, 3, 4, 5 , Hongxiang Li 5, 11, 12, 13, 14 , Lang Jiang 6, 7, 8, 9, 10
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The dielectric property has a significant effect on the performance of organic field-effect transistors (OFETs); therefore, a number of studies reported on dielectrics are focused on the development of high-performance OFETs. In this study, an air-gap dielectric was used to replace SiO2 as a low-defect insulating layer to improve the performance of OFETs. Based on the air-gap dielectric, a single-crystal ribbon of a thiophene-based quinoidal compound (TTT-CN) was first prepared, which exhibited a high electron mobility of 2.17 cm2 V−1 s−1 in air. In order to build p–n heterojunction devices, a p-type single-crystal transistor was developed, which showed a balanced mobility of 2.45 cm2 V−1 s−1, comparable to that of n-type transistors. Furthermore, the gate-tunable anti-ambipolar characteristics of FETs were demonstrated based on the p–n heterojunction obtained by combining the cross-overlapped n- and p-type single crystals with the air-gap dielectric. The reduction in the number of trap states on the air-gap layer resulted in a smaller hysteresis effect, and the value of ΔVpeak effectively reduced from 28.5 V to 6 V in anti-ambipolar transistors.
中文翻译：
高性能n型和p型有机单晶场效应晶体管，其气隙电介质可实现反双极性传输
介电性能对有机场效应晶体管（OFET）的性能有重要影响；因此，有关电介质的许多研究都集中在高性能OFET的开发上。在这项研究中，使用气隙电介质代替SiO 2作为低缺陷绝缘层，以提高OFET的性能。首先，基于气隙电介质，制备了噻吩基醌型化合物（TTT-CN）的单晶带，其在空气中显示出2.17cm 2 V -1 s -1的高电子迁移率。为了构建p–n异质结器件，开发了p型单晶晶体管，其平衡迁移率为2.45 cm 2 V -1s -1，与n型晶体管相当。此外，基于通过将交叉重叠的n型和p型单晶与气隙电介质结合而获得的p–n异质结，证明了FET的栅极可调的反双极性特性。气隙层上的陷阱态数量的减少导致较小的磁滞效应，并且在反双极晶体管中，ΔV peak的值有效地从28.5 V减小至6V。
更新日期：2020-04-03
中文翻译：
高性能n型和p型有机单晶场效应晶体管，其气隙电介质可实现反双极性传输
介电性能对有机场效应晶体管（OFET）的性能有重要影响；因此，有关电介质的许多研究都集中在高性能OFET的开发上。在这项研究中，使用气隙电介质代替SiO 2作为低缺陷绝缘层，以提高OFET的性能。首先，基于气隙电介质，制备了噻吩基醌型化合物（TTT-CN）的单晶带，其在空气中显示出2.17cm 2 V -1 s -1的高电子迁移率。为了构建p–n异质结器件，开发了p型单晶晶体管，其平衡迁移率为2.45 cm 2 V -1s -1，与n型晶体管相当。此外，基于通过将交叉重叠的n型和p型单晶与气隙电介质结合而获得的p–n异质结，证明了FET的栅极可调的反双极性特性。气隙层上的陷阱态数量的减少导致较小的磁滞效应，并且在反双极晶体管中，ΔV peak的值有效地从28.5 V减小至6V。
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