Nano-crystalline indium oxide and tungsten-doped indium oxide were prepared by hydrothermal route and adopted as ozone sensitive materials at low temperature, comparing their performances with a commercial indium oxide. After hydrothermal synthesis, powders were calcined at 400 °C for 30 min and characterized by laser granulometry, thermal analysis, X-ray diffraction, N₂ adsorption, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and transmission electron microscopy. Sensors were developed by screen-printing the sensing materials onto α-alumina substrates with platinum interdigitated electrodes. After drying overnight, sensors were fired at 600 °C for 1 h in air.

The sensor response was measured in the range 25 °C–200 °C carrying on all measurements in a flow chamber at a constant flow rate of 1 L/min of dry air in the range 200–500 ppb O₃. Response time and recovery time (e.g., the times taken for the sensor to attain 90% of total impedance change from its initial impedance value) were detected, together with cross-sensitivity tests towards NH₃, CH₄, humidity, CO, NO₂, CO₂ and N₂O.

Sensor's response (R) was defined as the ratio between impedance of the film under gas exposure at the equilibrium and the impedance under dry air. Best results were obtained at 100 °C, with R equal to 464 under 500 ppb O_3. These results are extremely encouraging and support the exploitation of tungsten-doped indium oxide as low-temperature ozone sensors.

通过水热法制备了纳米晶氧化铟和掺钨氧化铟，并在低温下用作臭氧敏感材料，并将其性能与市售氧化铟进行了比较。水热合成后，将粉末在400°C下煅烧30分钟，并通过激光粒度分析，热分析，X射线衍射，N ₂吸附，X射线光电子能谱，场发射扫描电子显微镜和透射电子显微镜进行表征。传感器是通过将传感材料丝网印刷到具有铂叉指电极的α-氧化铝基板上而开发的。干燥过夜后，将传感器在600°C的空气中发射1小时。

传感器响应在25°C–200°C的范围内进行测量，并在流动室中以1 L / min的恒定流量在200–500 ppb O ₃范围内的干燥空气进行恒定测量。检测响应时间和恢复时间（例如，传感器从其初始阻抗值达到总阻抗变化的90％所需的时间），以及对NH ₃，CH ₄，湿度，CO，NO _2的交叉敏感性测试，CO ₂和N ₂ O.

传感器的响应（R）定义为平衡状态下暴露于气体下的薄膜阻抗与干燥空气下的阻抗之间的比率。在100°C下获得最佳结果，在500 ppb O ₃下，R等于464。这些结果非常令人鼓舞，并支持将掺杂钨的氧化铟用作低温臭氧传感器。