Abstract During the last decade, III–VI layered semiconductors (GaSe, InSe, GaS, etc.) have emerged as potential candidates for various applications, such as FET and optoelectronic devices. The properties of this class of layered materials are strongly dependent on their structure, and the existence of different polytypes makes it necessary the identification of the structural phase. In this work, we have performed a detailed investigation of the crystal structure and morphology of bulk InSe, by means of X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The combination of the employed techniques allowed to identify the structural phase of InSe samples ( ϵ polytype). Most importantly, we show that only by crossing the information of each technique it is possible to unambiguously discern between similar polytypes.

中文翻译：

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InSe层状半导体的结构研究

摘要 在过去十年中，III-VI 层状半导体（GaSe、InSe、GaS 等）已成为各种应用的潜在候选材料，例如 FET 和光电器件。这类层状材料的性质强烈依赖于它们的结构，不同多型体的存在使得结构相的识别成为必要。在这项工作中，我们通过 X 射线衍射 (XRD)、透射电子显微镜 (TEM) 和拉曼光谱对块状 InSe 的晶体结构和形貌进行了详细研究。所采用技术的组合允许识别 InSe 样品的结构相（ ϵ 多型）。最重要的是，