The vertically aligned one-dimensional (1D) core–shell structure can maximize the exposure and use of the functionally active surface while maintaining the geometric effects caused by the underlying structure. Herein, we have fabricated 1D vertically aligned ZnO/V₂O₅ core–shell hetero-nanostructure nanorod arrays (NRs) for photoelectrochemical (PEC) water splitting. ZnO/V₂O₅ NRs were prepared through the hydrothermal growing of ZnO NRs and then radio frequency (RF) magnetron sputtering deposition of V₂O₅ for 300, 600 and 900 s. The photocurrent density of ZnO/V₂O₅-based photoanodes was gradually increased with the sputtering time, reaching the maximum value of 1.21 mA/cm² at 1.23 V vs. reversible hydrogen electrode (RHE) for ZnO/V₂O₅-600, whereas for pure ZnO-based photoanode was 0.42 mA/cm². The incident photon to electron conversion efficiency (IPCE) of ZnO/V₂O₅-600 evaluated to be 82.3% which was 2.3 times higher than that of ZnO (36.4%). The improved PEC performance of ZnO/V₂O₅-600 is because the core–shell structure with a moderate thickness of the V₂O₅ layer has the extremely high carrier density, largest electrochemically active surface area (ECSA), largest carrier density, lowest charge recombination rate, and the longest lifetime of e-h pairs due to the formation of the staggered gap junction. This study provides an effective way to design and fabrication of hetero-nanostructures for high-efficiency photoelectrodes.

垂直对齐的一维（1D）核-壳结构可以最大程度地暴露和使用功能性活动表面，同时保持由基础结构引起的几何效果。在这里，我们制造了一维垂直排列的ZnO / V ₂ O ₅核-壳异质纳米结构纳米棒阵列（NRs），用于光化学（PEC）水分解。ZnO / V ₂ O ₅ NRs是通过水热生长ZnO NRs，然后在300、600和900 s的射频（RF）磁控溅射溅射V ₂ O ₅制备的。ZnO / V ₂ O ₅的光电流密度ZnO / V ₂ O ₅ -600相对于可逆氢电极（RHE），随着溅射时间的增加，基于基的光阳极逐渐增加，在1.23 V时达到1.21 mA / cm ²的最大值，而对于纯ZnO基的光阳极则为0.42mA / cm ²。ZnO / V ₂ O ₅ -600的入射光子电子转化效率（IPCE）为82.3％，是ZnO（36.4％）的2.3倍。ZnO / V ₂ O ₅ -600的PEC性能得到改善，是因为核壳结构具有中等厚度的V ₂ O ₅由于形成交错的缝隙结，该层具有极高的载流子密度，最大的电化学活性表面积（ECSA），最大的载流子密度，最低的电荷复合率和eh对的最长寿命。该研究为高效光电电极的异质纳米结构的设计和制造提供了有效的方法。