Abstract Titanium oxide (TiOx) thin films were deposited by reactive grid-assisted magnetron sputtering on glass substrates as function of the target power. Films were characterized by mechanical profilometry, optical spectrophotometry, four-probe method, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) in order to investigate the effect of the target power on electrical, structural and electronic properties. The electrical properties were measured after deposition and one year later to evaluate the stability of the sheet resistance. Data for suboxides show the decreasing of the optical gap, sheet resistance and density of electronic states in conduction and/or valence bands, and increasing of the optical gap entropy, optical absorption and film thickness as the target power increases. The absorption coefficient indicates the presence of mid-gap states in suboxides, inducing the redshift of the absorption onset. The TiO2 reference sample presents only a single transition in the ultraviolet part. XRD show amorphous structure for all samples. Ti2p and O1s spectra from XPS indicate an oxidized surface with a small contribution of Ti3+ states in either titanium suboxide or dioxide, where the surfaces with the highest concentrations of hydroxyl radicals presented the best stability of the sheet resistance after one year.

中文翻译：

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靶功率对反应栅辅助磁控溅射沉积非晶氧化钛光电性能的影响

摘要 通过反应栅辅助磁控溅射在玻璃基板上沉积氧化钛 (TiOx) 薄膜，作为靶材功率的函数。通过机械轮廓测定法、光学分光光度法、四探针法、X 射线衍射 (XRD) 和 X 射线光电子能谱 (XPS) 对薄膜进行表征，以研究目标功率对电学、结构和电子性能的影响。在沉积后和一年后测量电性能以评估薄层电阻的稳定性。低氧化物的数据表明，随着目标功率的增加，导带和/或价带中的光学间隙、薄层电阻和电子态密度降低，光学间隙熵、光吸收和膜厚度增加。吸收系数表明低价氧化物中存在中间能隙状态，导致吸收开始的红移。TiO2 参考样品在紫外部分仅呈现单一跃迁。XRD 显示所有样品的无定形结构。XPS 的 Ti2p 和 O1s 光谱表明氧化表面在低氧化钛或二氧化钛中的 Ti3+ 状态贡献很小，其中羟基自由基浓度最高的表面在一年后表现出最佳的薄层电阻稳定性。