Abstract

This paper presents a 4-bit micro-electromechanical system (MEMS) digital attenuator with improved attenuation accuracy by surface micromachining. The attenuator is consisted of monoblack type radio frequency MEMS switches and TaN film resistors fabricated on a glass substrate to control the reconfigurable power within DC ~ 18 GHz. The simulation results revealed that the device had favorable terminal matches ranging from 0 to 70 dB with a 10 dB step. The attenuation accuracy was better than 1.2 dB, the insertion loss was less than 1.32 dB, and the voltage standing wave rations were better than 1.56 under these eight attenuation steps. Additionally, the package size of this device was designed as 8.28 mm × 2.37 mm × 0.85 mm, such that it could be applied to miniaturized microwave instruments.

中文翻译：

---

具有高衰减精度的4位RF MEMS衰减器的设计与制造

摘要

本文提出了一种4位微机电系统（MEMS）数字衰减器，该衰减器通过表面微加工提高了衰减精度。衰减器由在玻璃基板上制造的单黑型射频MEMS开关和TaN薄膜电阻器组成，以控制DC〜18 GHz范围内的可重构功率。仿真结果表明，该器件具有从0到70 dB的良好终端匹配，步长为10 dB。在这八个衰减步骤中，衰减精度均优于1.2 dB，插入损耗小于1.32 dB，电压驻波比均大于1.56。此外，该设备的包装尺寸设计为8.28 mm×2.37 mm×0.85 mm，因此可以应用于小型微波仪器。