Field effect transistor (FET) biosensors based on low-dimensional materials have the advantages of small in size, simple structure, fast response and high sensitivity. In this work, a field-effect transistor biosensor based on molybdenum disulfide/graphene (MoS₂/graphene) hybrid nanostructure was proposed and fabricated for DNA hybridization detection. The biosensor achieved an effective response to DNA concentrations in a broad range from 10 aM to 100 pM and a limit of detection (LOD) of 10 aM was obtained, which was one or more orders of magnitude lower than the reported result. The sensing mechanisms (donor and gating effects) of the FET sensor were discussed. A larger voltage shift of the charge neutral point was obtained due to a strengthened donor effect and a weakened gating effect caused by the introduction of MoS₂ layers. Such FET sensor shows high specificity for different matching degrees of complementary DNA, indicating the potential use of such a sensor in disease diagnosis.

基于低维材料的场效应晶体管（FET）生物传感器具有体积小，结构简单，响应速度快和灵敏度高的优点。在这项工作中，一个基于二硫化钼/石墨烯（MoS ₂的场效应晶体管生物传感器/石墨烯）杂化的纳米结构被提出和制造用于DNA杂交检测 该生物传感器对10 aM至100 pM的宽范围DNA浓度实现了有效响应，检测限（LOD）为10 aM，比报道的结果低一个或多个数量级。讨论了FET传感器的传感机制（施主和门控效应）。由于加强的施主效应和由于引入MoS ₂层引起的门控效应减弱，获得了较大的电荷中性点电压偏移。这种FET传感器对互补DNA的不同匹配程度显示出高特异性，表明这种传感器在疾病诊断中的潜在用途。