Study of Direct Tunneling and Dielectric Breakdown in Molecular Beam Epitaxial Hexagonal Boron Nitride Monolayers Using Metal–Insulator–Metal Devices,ACS Applied Electronic Materials

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Study of Direct Tunneling and Dielectric Breakdown in Molecular Beam Epitaxial Hexagonal Boron Nitride Monolayers Using Metal–Insulator–Metal Devices
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-03-03 , DOI: 10.1021/acsaelm.9b00816
Zhenjun Cui ₁ , Yanwei He ₁ , Hao Tian ₁ , Alireza Khanaki ₁ , Long Xu ₁ , Wenhao Shi ₁ , Jianlin Liu ₁

Affiliation

Direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride (h-BN) monolayers were studied based on Ni/h-BN/Ni metal–insulator–metal (MIM) device structures. Effective tunneling areas are orders of magnitude smaller than physical areas of the devices. Statistical Weibull analysis of the breakdown characteristics shows that the breakdown area-scaling law applies to effective areas rather than physical areas of the devices. The h-BN monolayer MIM devices can sustain repeated dc voltage sweeping stresses up to 85 times under an extremely high compliance current of 100 mA, and the critical electric field is determined to be at least 11.8 MV/cm, demonstrating high dielectric strength and reliability of these h-BN monolayers. The mechanism of breakdown and recovery of the h-BN monolayer MIM devices is also discussed.

中文翻译：

金属-绝缘体-金属器件在分子束外延六方氮化硼单分子层中的直接隧穿和介电击穿研究

基于Ni / h-BN / Ni金属-绝缘体-金属（MIM）器件结构，研究了分子束外延六方氮化硼（h-BN）单层中的直接隧穿和介电击穿。有效的隧道面积比设备的物理面积小几个数量级。击穿特性的统计威布尔分析表明，击穿区域的比例定律适用于器件的有效区域，而不是物理区域。h-BN单层MIM器件在100 mA的极高顺从电流下可以承受高达85次的重复dc电压扫描应力，并且确定的临界电场至少为11.8 MV / cm，这证明了高介电强度和可靠性这些h-BN单层中的一部分。还讨论了h-BN单层MIM器件的击穿和恢复机制。

更新日期：2020-04-23

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