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In-beam creep of SiCf/SiC minicomposites under uniaxial tensile loading
Journal of Nuclear Materials ( IF 3.1 ) Pub Date : 2020-03-02 , DOI: 10.1016/j.jnucmat.2020.152086
Jiachao Chen , Sylvain Jacques , Marie-France Barthe , Chonghong Zhang , Pierre Desgardin

A newly developed clamping system for ceramic specimen is described in the present report. By using this system, the uniaxial tensile loading was first successfully applied up to fracture (950 MPa) on a SiCf/SiC minicomposite. A minicomposite is a 1D model composite. It consists of a SiC-based fiber tow embedded in a SiC matrix, which has a diameter of about 0.5 mm. Afterwards, the irradiation creep properties of SiCf/SiC minicomposites were studied. In-situ creep was performed in an in-beam creep device under uniaxial tensile stresses from 40 to 382 MPa during homogeneous helium irradiation. Homogenous irradiation was carried out by helium implantation with energies varying from 0 to 45 MeV. The displacement dose rate was 1.2 × 10−6 dpa/s. The average temperature was controlled to 700 and 900 °C within ±15 °C. Irradiation creep compliance of minicomposite was measured to be 3.07 × 10−5 and 5.43 × 10−5 dpa−1 MPa−1 at 700 °C and 900 °C, respectively.



中文翻译:

SiC f / SiC微型复合材料在单轴拉伸载荷下的束内蠕变

本报告介绍了一种新开发的用于陶瓷样品的夹紧系统。通过使用该系统,单轴拉伸载荷首先成功地施加到SiC f / SiC微型复合材料的断裂(950 MPa)上。微型复合材料是一维模型复合材料。它由嵌入SiC基质的SiC基纤维束组成,直径约0.5 mm。此后,SiC的照射蠕变特性˚F /碳化硅minicomposites进行了研究。在均质氦辐照期间,在束流蠕变装置中在40到382 MPa的单轴拉伸应力下进行原位蠕变。通过氦注入以从0到45MeV的能量进行均质照射。位移剂量率为1.2×10 -6dpa / s。将平均温度控制在±15°C之内,分别为700和900°C。微型复合材料的辐射蠕变顺应性在700°C和900°C时分别为3.07×10 -5和5.43×10 -5 dpa -1 MPa -1

更新日期:2020-03-02
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