A symmetric coplanar metal-semiconductor-metal structure has been successfully fabricated on a quaternary thin film of (Al_xGa_1-x)_yIn_1-yP epitaxially grown on (100) semi-insulating GaAs (SI-GaAs) substrate for visible photodetection. The crystallinity and alloy composition of the grown material was investigated with the help of high-resolution x-ray rocking curve and photoluminescence experiment giving the values of y = 0.66 and x = 0.67. The low-temperature photoluminescence study also gave insight into the defect levels in the material. The dark current-voltage curve was fitted by employing a back-to-back connected two-diode model to extract the barrier heights and ideality factor of the nickel contacts which were found to be 0.84 eV, 0.82 eV and 1.014, respectively. The photo-response of the device was studied in the wavelength range of 300−1000 nm which exhibited a peak at 610 nm. The maximum peak responsivity, detectivity and photosensitivity at a fixed applied bias of +15 V appeared to be 1.62 AW⁻¹, 6.34 × 10¹¹ cmHz^1/2W^-1 and 2.26 × 10⁵ cm²W⁻¹, respectively whereas under −15 V these values were 0.6 AW⁻¹, 2.37 × 10¹¹ cmHz^1/2W⁻¹, and 8.72 × 10⁴ cmW⁻¹, respectively in the presence of 610 nm illumination with optical power of 2 μW/cm². The photodetector showed a rise time of 91 μs and the decay characteristics exhibited two channels of 83 μs and 282 μs, which are quite fast considering the temporal performance of similar kinds of devices. The photocurrent showed sub-linear power dependence with an increasing optical intensity which further refers to the recombination of photogenerated electron-hole pairs through trap and recombination centres within the forbidden gap.

已经成功地在（Al _x Ga _1-x）_y In _1-y的四元薄膜上制造了对称的共面金属-半导体-金属结构在（100）半绝缘GaAs（SI-GaAs）衬底上外延生长的P，用于可见光检测。借助高分辨率x射线摇摆曲线和光致发光实验研究了生长材料的结晶度和合金成分，得出y = 0.66和x = 0.67。低温光致发光研究还深入了解了材料中的缺陷水平。通过采用背对背连接的两个二极管模型拟合暗电流-电压曲线，以提取镍触点的势垒高度和理想因子，分别为0.84 eV，0.82 eV和1.014。研究了该器件在300-1000 nm波长范围内的光响应，该波长在610 nm处出现峰值。最大峰值响应度^-1，6.34×10 ¹¹ cmHz ^1/2 w ^ ^-1和2.26×10 ⁵厘米² w ^ ^-1，而分别下发-15V这些值分别为0.6 AW ^-1，2.37×10 ¹¹ cmHz ^1/2 w ^ ^-1和分别在610 nm照明和2μW / cm ^2的光功率存在下为8.72×10 ⁴ cmW ^-1。光电探测器的上升时间为91μs，衰减特性为两个通道，分别为83μs和282μs，考虑到类似器件的时间性能，该通道非常快。光电流表现出亚线性功率依赖性，并且具有增加的光强度，这进一步涉及光生电子-空穴对通过禁带内的陷阱和复合中心的复合。