Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2,Journal of Materials Chemistry C

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Improving the chemical potential of nitrogen to tune the electron density and mobility of ZnSnN2
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020/02/29 , DOI: 10.1039/c9tc06965h
Fan Ye _{1,

2,

3,

4,

5} , Qian-Qian Chen _{1,

2,

3,

4,

5} , Xing-Min Cai _{1,

2,

3,

4,

5} , Yi-Zhu Xie _{1,

2,

3,

4,

5} , Xiu-Fang Ma _{1,

2,

3,

4,

5} , Karthikeyan Vaithinathan _{5,

6,

7,

8} , Dong-Ping Zhang _{1,

2,

3,

4,

5} , Ping Fan _{1,

2,

3,

4,

5} , V. A. L. Roy _{5,

6,

7,

8}

Affiliation

To meet device applications, it is essential to fabricate nondegenerate ZnSnN₂ with higher mobility. Herein, the chemical potential of nitrogen was improved under Zn-rich sputtering conditions and nondegenerate ZnSnN₂ with mobility higher than 20 cm² V⁻¹ s⁻¹ was successfully fabricated. The properties of the samples were characterized. The obtained ZnSnN₂ is wurstite. Band conduction is observed in the range 300–100 K and nearest neighbour hopping is observed in the range 100–70 K. The forbidden band gap is about 1.43 eV and Sn substituting Zn is the major donor, whose ionization energy is 34.6 meV. Improving the chemical potential of nitrogen under Zn-rich conditions effectively changes the off-stoichiometry of ZnSnN₂ and unintentionally increases oxygen doping, which finally leads to a decrease in electron density and an increase in mobility.

中文翻译：

提高氮的化学势以调节ZnSnN2的电子密度和迁移率

为了满足器件应用，必须制造具有更高迁移率的未变性ZnSnN ₂。在此，在富锌溅射条件下提高了氮的化学势，并且成功地制备了迁移率高于20 cm ² V ^-1 s ^-1的未退化的ZnSnN ₂。表征样品的性质。所得ZnSnN ₂是香肠。在300–100 K范围内观察到带导，在100–70 K范围内观察到最近的邻居跳跃。禁带宽度约为1.43 eV，Sn取代Zn是主要的施主，其电离能为34.6 meV。在富锌条件下提高氮的化学势可有效地改变ZnSnN ₂的化学计量，并意外地增加了氧的掺杂，最终导致电子密度的降低和迁移率的提高。

更新日期：2020-04-03

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