Properties of light characteristics of external-cavity high-power semiconductor lasers with an active region based on a single InGaAs quantum well operating at ultrahigh pulsed currents are studied. A maximum peak power of 45 W at 110 A (from the aperture of 100 µm), a linewidth of 0.15 nm, and a wavelength in the range of 1040–1070 nm are demonstrated for an external-cavity laser. The tuning range narrows with an increase in the pump current from 27 nm at a current of 20 A to 23 nm at a current of 100 A. The maximum side-mode suppression ratio is up to 45 dB in the central region of the tuning range, while at the edges of this range it was no worse than 20 dB. It is determined that the tuning range of the laser spectrum is limited by the onset of an additional Fabry–Perot cavity line in the spectrum.

中文翻译：

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高脉冲电流泵浦下基于单个InGaAs量子阱的外腔高功率半导体激光器的性能

研究了具有基于单个InGaAs量子阱的有源区的外腔高功率半导体激光器在超高脉冲电流下的光特性。对于外腔激光器，在110 A（从100 µm的孔开始）处的最大峰值功率为45 W，线宽为0.15 nm，波长范围为1040-1070 nm。随着泵浦电流从20 A的电流的27 nm增加到100 A的电流的23 nm，调谐范围变窄。在调谐范围的中心区域，最大侧模抑制比高达45 dB ，但在该范围的边缘，它不低于20 dB。可以确定，激光光谱的调谐范围受到光谱中另一条Fabry-Perot腔线的出现的限制。