We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

中文翻译：

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使用 300 mm 工业平台在富氮氮化硅波导中产生宽带超连续谱

我们报告了在 300 毫米平台上通过后端互补金属氧化物半导体 (CMOS) 兼容工艺制造的富氮 (N-rich) 氮化硅波导的超连续谱生成。通过在 1200 nm 波长的反常色散区域中泵浦，获得了涵盖可见光和近红外范围（包括 O 波段）的两个八度跨度光谱。数值计算表明，尽管硅含量较低，但富氮氮化硅的非线性指数与化学计量氮化硅的非线性指数处于同一数量级。然后，富含 N 的氮化硅似乎是与后端 CMOS 工艺兼容的非线性器件的有希望的候选者。