当前位置: X-MOL 学术J. Solid State Chem. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
MII2M3IIIF3(Te6F2O16) (MII = Pb, Ba; MIII = Al, Ga): New mixed anionic tellurites with isolated Te6 coplanar rings
Journal of Solid State Chemistry ( IF 3.2 ) Pub Date : 2020-02-29 , DOI: 10.1016/j.jssc.2020.121288
Peng-Fei Li , Fang Kong , Jiang-Gao Mao

Three new isostructural mixed anionic tellurites, namely, Pb2Al3F3(Te6F2O16) (1), Pb2Ga3F3(Te6F2O16) (2) and Ba2Ga3F3(Te6F2O16) (3), have been synthesized successfully by hydrothermal reactions. Their structures feature a novel 3D framework composed of 1D GaO4F2/AlO4F2 octahedral chains joined together with isolated (Te6F2O16)10− anionic rings. The charge-balance cations of Pb2+ or Ba2+ are located at the six-member polyhedral ring tunnels of the structures. The 0D (Te6F2O16)10− anionic ring is first reported in fluorotellurites, formed by two TeO4 and four TeO3F groups via corner-sharing. Thermogravimetric analyses revealed that their thermostabilities are in the following order: Pb2Al3F3(Te6F2O16) (1), Ba2Ga3F3(Te6F2O16) (3) and Pb2Ga3F3(Te6F2O16) (2). Optical diffuse reflectance spectra showed that these solids are wide band gap semiconductors with Eg of 4.1, 4.2 and 4.4 eV for compounds 1–3 respectively. The band gaps of compounds 1 and 2 are determined by O, Te and Pb atoms while the band gap of compound 3 is determined by O and Te atoms based on the theoretical calculations.



中文翻译:

M II 2 M 3 III F 3(Te 6 F 2 O 16)(M II = Pb,Ba; M III = Al,Ga):带有分离的Te 6共面环的新型混合阴离子亚碲酸盐

三种新的等结构混合阴离子碲酸盐,分别为Pb 2 Al 3 F 3(Te 6 F 2 O 16)(1),Pb 2 Ga 3 F 3(Te 6 F 2 O 16)(2)和Ba 2 Ga 3 F通过水热反应成功地合成了3(Te 6 F 2 O 16)(3)。它们的结构具有由1D GaO 4 F 2 / AlO 4 F 2组成的新型3D框架八面体链与孤立的(Te 6 F 2 O 1610-阴离子环连接在一起。Pb 2+或Ba 2+的电荷平衡阳离子位于结构的六元多面体环形隧道中。0D(Te 6 F 2 O 1610-阴离子环最早是在萤石中报道的,它由两个TeO 4和四个TeO 3 F基团通过边角共享形成。热重分析显示其热稳定性按以下顺序:Pb 2 Al 3 F 3(Te 6F 2 O 16)(1),Ba 2 Ga 3 F 3(Te 6 F 2 O 16)(3)和Pb 2 Ga 3 F 3(Te 6 F 2 O 16)(2)。光学漫反射光谱表明,这些固体是宽带隙半导体,化合物1-3的Eg分别为4.1、4.2和4.4 eV 。化合物12的带隙由O,Te和Pb原子确定,而化合物3的带隙 由O和Te原子根据理论计算确定。

更新日期:2020-03-02
down
wechat
bug