In this paper, we realize growth of the delta doped layer (3 nm thick) with high concentration of nitrogen atoms (about 1.4 × 10¹⁹ cm⁻³) during CVD diamond growth process. We experimentally investigate the distribution of the nitrogen inside the grown layer and formation of the NV centers during such growth. Using confocal microscopy, we analyze the spatial distribution of the NV centers and investigate the formation efficiency of the NV centers in delta doped layers. The spatial distribution is measured by two methods, using second-order correlation function and emission volume analysis, and NV center concentration is found to be 3.9 ± 0.6 and 2.7 ± 0.2 μm^-2 consequently. The divergence between the methods is discussed. As-grown NV centers formation efficiency was found to be 30 times lower than in the case of uniform doped diamond growth. Nevertheless, coherence time of an electron spin for a single NV center inside the delta layer was found to be around 1 μs which is quite reasonable given the concentration of the nitrogen in the sample.

在本文中，我们实现了在CVD金刚石生长过程中具有高浓度氮原子（约1.4×10 ¹⁹ cm ^-3）的δ掺杂层（3 nm厚）的生长。我们通过实验研究了氮在生长层内部的分布以及在这种生长过程中NV中心的形成。使用共聚焦显微镜，我们分析了NV中心的空间分布，并研究了δ掺杂层中NV中心的形成效率。使用二阶相关函数和发射量分析，通过两种方法测量空间分布，发现NV中心浓度为3.9±0.6和2.7±0.2μm ^-2所以。讨论了方法之间的差异。发现生长的NV中心的形成效率比均匀掺杂的金刚石生长情况低30倍。然而，发现在δ层内单个NV中心的电子自旋相干时间约为1μs，这在样品中氮的浓度下非常合理。