Abstract In this work we developed the synthesis and characterization of Sb2Te3 thin films, which were grown by RF as well as DC sputtering as a function of the deposition pressure (Pd), 5–15 mTorr. Sb2Te3 films were characterized through X-Ray Diffraction, Energy Dispersive Spectrometry (EDS), Scanning Electron Microscopy (SEM) and electrical resistivity measurements. As a part, contact layer, of the CdTe-based Solar Cell, Current-Voltage (I–V) as well as External Quantum Efficiency (EQE) measurements were carried out. Our results indicate that the radio-frequency sputtered Sb2Te3 are polycrystalline with predominant rhombohedral crystalline structure, whereas the DC-sputtered films crystallized mainly in the monoclinical structure. Both set of samples showed a resistivity of the order of 10−4 Ω-cm. Concerning the CdTe-based solar cell, the incorporation of the Sb2Te3 as a back surface film in the back contact improves the solar cell efficiency up to 8.01%, 10 mTorr pressures into the growth chamber, as compared to the CdTe-based solar cell, 4.82% efficiency, without the Sb2Te3 layer.

中文翻译：

---

射频和直流溅射 Sb2Te3 薄膜的压力效应及其在太阳能电池中的应用

摘要 在这项工作中，我们开发了 Sb2Te3 薄膜的合成和表征，这些薄膜通过 RF 和 DC 溅射生长，作为沉积压力 (Pd) 的函数，5-15 mTorr。Sb2Te3 薄膜通过 X 射线衍射、能谱仪 (EDS)、扫描电子显微镜 (SEM) 和电阻率测量进行表征。作为 CdTe 基太阳能电池的接触层的一部分，进行了电流电压 (I-V) 以及外部量子效率 (EQE) 测量。我们的结果表明，射频溅射的 Sb2Te3 是多晶的，具有主要的菱形晶体结构，而直流溅射的薄膜主要以单斜结构结晶。两组样品均显示出 10-4 Ω-cm 数量级的电阻率。关于 CdTe 太阳能电池，