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Bismuth nanosheets Q-switched Nd:BGO laser operating at 1065 nm with 880 nm laser-diode pumping
Optics & Laser Technology ( IF 4.6 ) Pub Date : 2020-02-28 , DOI: 10.1016/j.optlastec.2020.106152
Xiaoyue Feng , Qianqian Hao , Yunkun Lin , Xiuru Yu , Qinghui Wu , Hao Huang , Feng Zhang , Jie Liu , Liangbi Su , Han Zhang

We report a passively Q-switched Nd:BGO laser at 1065 nm based on a Bismuth nanosheets saturable absorber. The Nd:BGO crystal was successfully grown by the micro-pulling-down method, and first obtained the continuous-wave laser operation with 880 nm laser-diode pumping. Moreover, for the first time, the passive Q-switching was achieved by the Bismuth nanosheets absorber at 1 μm. Under the absorbed pump power of 3.3 W, the shortest pulse width and maximum repetition rate were 256 ns and 223.7 kHz, respectively. The maximum single pulse energy was 0.59 μJ and the corresponding peak power was 1.55 W. The results demonstrate that the 880 nm diode directly-pumped Q-switched Nd:BGO laser can generate high-efficiency, high-beam-quality, and high-repetition-rate all-solid-state lasers.



中文翻译:

铋纳米片Q开关Nd:BGO激光器在880 nm激光二极管泵浦下工作于1065 nm

我们报告了基于铋纳米片可饱和吸收体的1065 nm被动Q开关Nd:BGO激光器。通过微下拉法成功地生长了Nd:BGO晶体,并首先通过880 nm激光二极管泵浦获得了连续波激光操作。此外,这是第一次通过铋纳米片吸收剂以1μm的速度实现了被动Q开关。在吸收的3.3 W泵浦功率下,最短脉冲宽度和最大重复率分别为256 ns和223.7 kHz。最大单脉冲能量为0.59μJ,相应的峰值功率为1.55W。结果表明,880 nm二极管直接泵浦的Q开关Nd:BGO激光器可以产生高效率,高光束质量和高功率。重复频率全固态激光器。

更新日期:2020-02-28
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