In general for crystal growth, material should deposit on the seed crystal and not on any adjacent supporting structures. This efficiently uses the source material and avoids the possibility of spurious polycrystals encroaching on, and interfering with the single crystal growth. In this paper, a new crucible design with a cooling fin in contact with the seed was simulated and experimentally demonstrated on the physical vapor transport (PVT) crystal growth of scandium nitride (ScN). The heat transfer of the growth cavity for a conventional crucible and a modified crucible with the cooling fin were modeled theoretically via computational fluid dynamics (CFD) with FLUENT. The CFD results showed that the seed in the modified crucible was approximately 10 °C cooler than the crucible lid, while in the conventional crucible the temperature of the seed and lid were uniform. The experimental results showed that increasing the temperature gradient between the source and the seed by employing the cooling fin led to a dramatic increase in the growth rate of ScN on the seed and reduced growth on the lid. The relative growth rates were 80% and 20% on the seed and lid respectively, in the modified crucible, compared to 25% and 75% with the conventional crucible. Thus, the modified crucible improved the process by increasing the growth rate of single crystals grown by sublimation.

通常，对于晶体生长，材料应沉积在籽晶上，而不应沉积在任何相邻的支撑结构上。这有效地利用了源材料，并避免了寄生多晶侵入并干扰单晶生长的可能性。在本文中，模拟了一种新的坩埚设计，其中冷却翅片与晶种接触，并通过实验证明了氮化scan（ScN）的物理气相传输（PVT）晶体生长。理论上，使用FLUENT通过计算流体动力学（CFD）对常规坩埚和带有散热片的改进型坩埚的生长腔进行传热。CFD结果表明，改性坩埚中的种子比坩埚盖的温度低约10°C，而在常规坩埚中，种子和盖子的温度是均匀的。实验结果表明，通过使用散热片来增加源和种子之间的温度梯度会导致ScN在种子上的生长速率急剧增加，而在盖上的生长减少。改良型坩埚的种子和盖的相对生长率分别为80％和20％，而常规坩埚的相对生长率分别为25％和75％。因此，改性坩埚通过提高通过升华生长的单晶的生长速率来改善了工艺。改良型坩埚在种子和盖子上的相对增长率分别为80％和20％，而传统坩埚的相对增长率分别为25％和75％。因此，改性坩埚通过提高通过升华生长的单晶的生长速率来改善了工艺。改良型坩埚在种子和盖子上的相对增长率分别为80％和20％，而传统坩埚的相对增长率分别为25％和75％。因此，改性坩埚通过提高通过升华生长的单晶的生长速率来改善了工艺。