The theory of elasticity accurately describes the deformations of macroscopic bodies under the action of applied stress [1]. In this review, we examine the internal mechanisms of elasticity for strained-layer semiconductor heterostructures. In particular, we present extended x-ray-absorption fine structure (EXAFS) and x-ray diffraction (XRD) measurements to show how the bond lengths and bond angles in semiconductor thin-alloy films change with strain when they are grown coherently on substrates with different lattice constants. The structural distortions measured by experiment are compared to valence-force field (VFF) calculations and other theoretical models. Atomic switching and interfacial strain at buried interfaces are also discussed.

弹性理论准确地描述了在施加应力作用下宏观物体的变形[1]。在这篇综述中，我们研究了应变层半导体异质结构的内部弹性机理。特别是，我们提出了扩展的X射线吸收精细结构（EXAFS）和X射线衍射（XRD）测量，以显示当半导体薄合金膜在基底上一致地生长时，半导体合金膜中的键长和键角如何随应变而变化。具有不同的晶格常数。将通过实验测量的结构变形与价力场（VFF）计算和其他理论模型进行比较。还讨论了埋藏界面的原子转换和界面应变。