Abstract III/V semiconductors with cubic zinc-blende crystal structure, for example GaAs, GaP or InP, become metastable if atoms with significantly smaller or larger covalent radius than the matrix atoms are alloyed. Examples are the incorporation of Boron, Nitrogen and Bismuth in the above-mentioned materials. The resulting multinary compound semiconductors, like for example (Ga,In)(N,As), Ga(N,As,P) and Ga(As,Bi), are extremely interesting for several novel applications. The growth conditions, however, have to be adopted to the metastability of the material systems. In addition, structure formation can occur which is different from stable materials. This paper summarizes our current knowledge on growth characteristics of several metastable materials. Mainly examples for Metal Organic Vapor Phase Epitaxy (MOVPE) are given. The MOVPE growth characteristics are compared to selected examples using Molecular Beam Epitaxy growth to highlight that the observed growth characteristics are intrinsic for the studied metastable material systems. Furthermore, structural peculiarities of dilute borides, nitrides and bismides occurring during growth as well as in growth interruptions are summarized and correlated to the growth conditions.

中文翻译：

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亚稳态立方闪锌矿 III/V 半导体：生长和结构特征

摘要 具有立方闪锌矿晶体结构的 III/V 族半导体，例如 GaAs、GaP 或 InP，如果共价半径明显小于或大于基体原子的原子被合金化，则会变成亚稳态。例子是在上述材料中加入硼、氮和铋。由此产生的多元化合物半导体，例如 (Ga,In)(N,As)、Ga(N,As,P) 和 Ga(As,Bi)，对于一些新应用非常有趣。然而，生长条件必须适应材料系统的亚稳定性。此外，可能会发生不同于稳定材料的结构形成。本文总结了我们目前对几种亚稳态材料的生长特性的了解。主要给出了金属有机气相外延 (MOVPE) 的例子。将 MOVPE 生长特性与使用分子束外延生长的选定示例进行比较，以强调观察到的生长特性对于所研究的亚稳态材料系统来说是固有的。此外，还总结了生长过程中以及生长中断时出现的稀硼化物、氮化物和双化物的结构特性，并将其与生长条件相关联。