Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA)₂Cs₃Pb₄I₁₃, to those based on 3D CsPbI₃. Astonishingly, the ON/OFF ratio of the (PEA)₂Cs₃Pb₄I₁₃-based memory devices (10⁹) is three orders of magnitude higher than that of the CsPbI₃ device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI₃ device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability.

基于卤化钙钛矿的电阻式随机存取存储器（ReRAM）设备最近已成为一类新的数据存储设备，近年来，在这些设备中使用的交换材料引起了广泛的关注。迄今为止，三维（3D）卤化物钙钛矿已成为电阻开关存储器件研究最多的材料。但是，基于3D的存储设备显示的开/关比可与氧化物或硫族化物ReRAM器件相比。另外，钙钛矿材料易于暴露于空气。在本文中，我们比较了基于准二维（2D）卤化物钙钛矿（PEA）₂ Cs ₃ Pb ₄ I ₁₃的ReRAM器件的电阻切换特性与基于3D CsPbI的电阻切换特性₃。令人惊讶的是，基于（PEA）₂ Cs ₃ Pb ₄ I ₁₃的存储器件（10 ⁹）的开/关比比CsPbI ₃器件的开/关高三个数量级，这归因于高-前者的电阻状态（HRS）电流。在环境条件下，该器件还保持了2周的高ON / OFF电流比，而CsPbI ₃器件在5天后迅速退化并显示出不可靠的存储性能。这些结果强烈表明，准2D卤化物钙钛矿具有理想的导通/关断比和长期稳定性，因此在电阻开关存储器中具有潜力。