This article presents a leakage-based digital temperature sensor with reduced supply sensitivity for on-chip thermal management. The sensor, featured with a novel supply sensitivity suppression mechanism, performs the temperature-to-frequency conversion by a leakage-dominated ring oscillator (LDRO) with exponential temperature dependence. Thanks to the proposed robust and reconfigurable Schmitt-trigger-based delay cell, both NMOS and PMOS leakage-based sensors can be evaluated in a single design. Fabricated in a standard 55-nm CMOS digital process, the proposed digital temperature sensor occupies a silicon area of only 1770 $\mu \text{m}^{2}$ and can operate under a supply ranging from 0.8 to 1.3 V, with the supply sensitivities of 2.53–5.22 °C/V and 2.84–5.76 °C/V in two working modes at room temperature, respectively. Measurement results show that the sensor achieves an inaccuracy of ±0.70 °C (3 $\sigma $ ) from −40 °C to 125 °C after two-point calibration.

中文翻译：

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1770-μm² 基于泄漏的数字温度传感器，在 55-nm CMOS 中具有电源灵敏度抑制功能

本文介绍了一种基于泄漏的数字温度传感器，其降低了用于片上热管理的电源灵敏度。该传感器具有新颖的电源灵敏度抑制机制，通过具有指数温度依赖性的泄漏主导环形振荡器 (LDRO) 执行温度到频率的转换。由于提出了稳健且可重新配置的基于施密特触发器的延迟单元，因此可以在单个设计中评估基于 NMOS 和 PMOS 泄漏的传感器。采用标准 55 纳米 CMOS 数字工艺制造，建议的数字温度传感器仅占用 1770 的硅面积 $\mu \text{m}^{2}$ 并且可以在0.8至1.3 V的电源下工作，在室温下两种工作模式下的电源灵敏度分别为2.53-5.22°C/V和2.84-5.76°C/V。测量结果表明，传感器实现了 ±0.70 °C (3 $\西格玛 $ ) 在两点校准后从 -40 °C 到 125 °C。