When a hole-like trap appears in deep level transient spectroscopy spectra of devices with an AlGaN/GaN heterojunction, surface states at the top of the AlGaN layer are often incriminated. However, no deep investigation has proved that this anomalous signal is related to interface states. In this work, we made a full study of a hole-like signal which appears in spectra of AlGaN/GaN Schottky barrier diodes. The mechanism responsible for the formation of the peak is determined, a model is proposed and this is then applied to make our analysis. We show that two deep donor levels in the AlGaN layer are responsible for the formation of the hole-like signal and we have determined their activation energies and their concentrations. With the help of secondary ion mass spectrometry studies, the dominant trap was assigned to a nitrogen antisite defect, which is in accordance with the literature. The second trap was tentatively associated with gallium vacancy related defects. The mechanism...

中文翻译：

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AlGaN / GaN异质结的深层瞬态光谱中的空穴状陷阱的分析

当在具有AlGaN / GaN异质结的器件的深层瞬态光谱中出现类似空穴的陷阱时，通常会指出AlGaN层顶部的表面状态。但是，没有深入的研究证明该异常信号与界面状态有关。在这项工作中，我们对出现在AlGaN / GaN肖特基势垒二极管光谱中的空穴状信号进行了全面研究。确定了造成峰形成的机理，提出了一个模型，然后将其用于进行分析。我们表明，AlGaN层中的两个深施主能级负责形成空穴样信号，并且我们确定了它们的活化能和浓度。在二次离子质谱研究的帮助下，主要陷阱被确定为氮反位缺陷，这与文献一致。第二个陷阱暂时与镓空位相关的缺陷有关。机制...