Novel transport behavior of carriers always generates new types of electronic elements. For traditional resistor element, the voltage is directly proportional to drift current regardless of Joule heat, which can be credibly described by Ohm’s law. There are still some new types of materials such as memristor and Weyl metal that do not follow Ohm’s law, and they have drawn significant attention. In this work, we theoretically and experimentally investigated the transport behavior of diffusion current near the interface of the silicon-based Schottky junction. It is clearly observed that the output voltage in the diffusion path could be higher (lower) when the resistance was lower (higher), even under identical diffused current. Deep theoretical analysis is also carried out, which is found to be in good agreement with the experimental results. These results suggest that the transport behavior of diffusion carriers is quite different from the drift carriers. This study may provide a...

中文翻译：

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非线性扩散势诱发的抗欧姆效应

载具的新颖运输行为总是会产生新型的电子元件。对于传统的电阻器元件，无论焦耳热如何，电压都与漂移电流成正比，这可以由欧姆定律可靠地描述。仍然存在一些不遵循欧姆定律的新型材料，例如忆阻器和Weyl金属，它们引起了极大的关注。在这项工作中，我们在理论上和实验上研究了扩散电流在硅基肖特基结界面附近的传输行为。清楚地观察到，即使在相同的扩散电流下，当电阻较低（较高）时，扩散路径中的输出电压也可能较高（较低）。还进行了深入的理论分析，发现与实验结果非常吻合。这些结果表明，扩散载流子的传输行为与漂移载流子完全不同。这项研究可以提供...