Atom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure and hybrid nature of a semiconductor device can pose serious challenges to the accurate measurement of dopants. In particular, local magnification and trajectory aberration observed when analyzing hybrid materials with different evaporation fields can cause severe distortions in reconstructed geometry and uncertainty in local chemistry measurement. To address these challenges, this study systematically investigates the effect of APT sampling directions on the measurement of n-type dopants P and As in an Si fin field-effect transistor (FinFET). We demonstrate that the APT samples made with their Z-axis perpendicular to the center axis of the fin are effective to minimize the negative effects that result from evaporation field differences between the Si fin and SiO2 on reconstruction and achieve improved measurement of dopant distributions. In addition, new insights have been gained regarding the distribution of ion-implanted P and As in the Si FinFET.

中文翻译：

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Si FinFET 中掺杂剂分布的原子探针断层扫描表征：挑战和解决方案

原子探针断层扫描 (APT) 已成为表征三维半导体器件的重要工具。然而，半导体器件的复杂结构和混合特性可能对掺杂剂的准确测量构成严重挑战。特别是，在分析具有不同蒸发场的混合材料时观察到的局部放大率和轨迹畸变会导致重构几何形状的严重失真和局部化学测量的不确定性。为了应对这些挑战，本研究系统地研究了 APT 采样方向对硅鳍场效应晶体管 (FinFET) 中 n 型掺杂剂 P 和 As 测量的影响。我们证明了用它们制作的 APT 样本Z垂直于翅片中心轴的轴有效地减少了由 Si 翅片和 SiO2 之间的蒸发场差异引起的负面影响2重建并实现掺杂剂分布的改进测量。此外，关于离子注入的 P 和 As 在 Si FinFET 中的分布，我们获得了新的见解。