Fast x-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard x-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents x-ray pulse characterization conducted at the Advanced Photon Source of x-ray absorption efficiency and temporal impulse response of current-mode semiconductor x-ray detectors composed of Si, GaAs, and CdTe.

中文翻译：

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高阻抗电流模式 X 射线探测器的同步加速器表征

快速 X 射线探测器是脉冲功率和聚变应用中的关键工具，其中通常需要纳秒或更好的探测器脉冲响应。半导体探测器可以创建具有广泛操作灵活性的快速、灵敏的设备。通常需要在探测器灵敏度和速度之间进行权衡，但如果载流子达到高速度，则更高原子序数的吸收剂可以在不增加电荷收集时间的情况下增加硬 X 射线吸收。本文介绍了在高级光子源上进行的 X 射线脉冲表征，其中包括由 Si、GaAs 和 CdTe 组成的电流模式半导体 X 射线探测器的 X 射线吸收效率和时间脉冲响应。