Abstract

The process of the porous silicon layer formation by metal-assisted etching of single-crystal Si with the resistivity of ρ = 0.01 Ω cm, coated with thin Pd-film up to 100 nm thick, in HF/H₂O₂/H₂O solution is studied. The porous silicon is studied by scanning electron microscopy and gravimetric analysis. The dependence of the silicon dissolution rate on the HF concentration, in the presence and in the absence of the Pd-film, is investigated. The anodic current facilitating the Si dissolution in the HF solutions of different concentration is studied. By using sessile drop method, the porous silicon formed by the Pd-assisted anodic etching was shown to be superhydrophobic. The porous Si wetting angle reached 172°. The free surface energy for the porous layers and the water surface tension at the porous Si are calculated. The modified Si-surfaces may found their possible use in robotics.

中文翻译：

---

钯催化金属辅助刻蚀制备疏水性多孔硅

摘要

在HF / H ₂ O ₂ / H _2中，通过金属辅助蚀刻电阻率为ρ= 0.01Ωcm的单晶硅形成多孔硅层的过程，并涂覆了厚达100 nm的Pd薄膜研究了O解。通过扫描电子显微镜和重量分析法研究了多孔硅。在有和没有Pd膜的情况下，研究了硅溶解速率对HF浓度的依赖性。研究了促进硅在不同浓度的HF溶液中溶解的阳极电流。通过无滴法，通过Pd辅助阳极蚀刻形成的多孔硅显示出超疏水性。多孔Si的润湿角达到172°。计算出多孔层的自由表面能和多孔Si处的水表面张力。修改后的Si表面可能会在机器人技术中得到应用。