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Growth of ferromagnetic Co2FeSi films on flexible Ge(111)
Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.mssp.2020.104997
Shinya Yamada , Hidenori Higashi , Takeshi Kanashima , Kohei Hamaya

Abstract For flexible semiconductor spintronic devices, we explore the growth of one of the ferromagnetic full-Heusler alloys, Co 2 FeSi, on a (111)-oriented pseudo-single-crystalline Ge/polyimide flexible template. Using a low-temperature molecular beam epitaxy (MBE) technique, crystalline Co 2 FeSi films are obtained on the flexible Ge at less than 80 °C. An MBE-grown Ge layer on the flexible Ge enables to improve magnetic properties of the Co2FeSi films. This work is an important step of high-performance flexible spintronics with ferromagnetic full-Heusler alloys.

中文翻译:

在柔性 Ge(111) 上生长铁磁 Co2FeSi 薄膜

摘要 对于柔性半导体自旋电子器件,我们探索了一种铁磁全赫斯勒合金 Co 2 FeSi 在 (111) 取向的伪单晶 Ge/聚酰亚胺柔性模板上的生长。使用低温分子束外延 (MBE) 技术,可在低于 80 °C 的温度下在柔性 Ge 上获得结晶 Co 2 FeSi 薄膜。在柔性 Ge 上 MBE 生长的 Ge 层能够改善 Co2FeSi 薄膜的磁性能。这项工作是铁磁全赫斯勒合金高性能柔性自旋电子学的重要一步。
更新日期:2020-06-01
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