Abstract ZnO and vanadium-doped ZnO (0.7–4.1 at.%) thin films were deposited onto corning glass substrates by the pulsed laser deposition technique using a KrF excimer laser (λ = 248 nm). The films were deposited at 500 °C under an oxygen pressure of 1 Pa with a laser fluence of 2 J/cm2. The structural, morphological, optical and electrical properties as a function of the dopant atomic concentration were investigated by means of X-ray diffraction, Scanning Electron Microscopy, spectrophotometry, conductivity and Hall measurements. All the doped and undoped films show a preferential orientation along the c-axis with a deterioration at higher doping levels (>4 at. %). Besides, as the doping amount increases the in-plane stress leads to an increase of the c-axis lattice parameter. The films are transparent within the wavelength range 400–1200 nm. The electrical resistivity of the films drops from 8.2 10−3 to 1.3 10−3 Ω cm with an increase in the dopant concentration up to 0.9 at. % and then rises as the dopant level is increased further.

中文翻译：

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脉冲激光沉积透明和导电的 V 掺杂 ZnO 薄膜

摘要 ZnO 和掺钒 ZnO (0.7–4.1 at.%) 薄膜通过脉冲激光沉积技术使用 KrF 准分子激光器 (λ = 248 nm) 沉积到康宁玻璃基板上。薄膜在 500 °C 和 1 Pa 的氧气压力下以 2 J/cm2 的激光能量密度沉积。通过 X 射线衍射、扫描电子显微镜、分光光度法、电导率和霍尔测量，研究了作为掺杂剂原子浓度函数的结构、形态、光学和电学特性。所有掺杂和未掺杂的薄膜都显示出沿 c 轴的优先取向，并在更高的掺杂水平（> 4 原子百分比）下恶化。此外，随着掺杂量的增加，面内应力导致 c 轴晶格参数增加。这些薄膜在 400-1200 nm 的波长范围内是透明的。随着掺杂浓度增加到 0.9at，薄膜的电阻率从 8.2 10-3 下降到 1.3 10-3 Ω cm。%，然后随着掺杂剂水平的进一步增加而上升。