A novel hole-transport material (HTM) based on an anthradithiophene central bridge named BTPA-7 is developed. In comparison to spiro-OMeTAD (2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene), the synthetic steps of BTPA-7 are greatly reduced from 6 to 3 and the synthetic cost of BTPA-7 is nearly a half that of spiro-OMeTAD. Moreover, BTPA-7 exhibits a relatively lower conductivity but higher hole mobility and higher glass transition temperature (T_g) than spiro-OMeTAD. Compared with the photovolatic performance for spiro-OMeTAD, FA_0.85MA_0.15PbI₃ and MAPbI₃ PSC devices based on BTPA-7 exhibit slightly lower PCEs with the values of 17.58% (18.88% for spiro-OMeTAD) and 11.90% (13.25% for spiro-OMeTAD), respectively. Nevertheless, a dramatically higher J_sc of PSC based on BTPA-7 is achieved, which arises from the higher hole mobility of BTPA-7. In addition, the relatively hydrophobic character of BTPA-7 eventually enhances the PSC device stability. Lower cost, higher hole mobility, higher T_g, satisfactory photovoltaic performance, and superior device stability of BTPA-7 can be utilized as a substitute for spiro-OMeTAD in PSCs.

开发了一种基于蒽噻吩中心桥BTPA-7的新型空穴传输材料（HTM）。与螺-OMeTAD（2,2'，7,7'-四-（N，N-二-对甲氧基苯胺）-9,9'-螺二芴）相比，BTPA-7的合成步骤从如图6至3所示，BTPA-7的合成成本几乎是spiro-OMeTAD的一半。此外，与螺-OMeTAD相比，BTPA-7具有相对较低的电导率，但具有较高的空穴迁移率和较高的玻璃化转变温度（T _g）。与螺环-OMeTAD，FA的photovolatic性能相比_0.85 MA _0.15碘化铅₃和MAPbI ₃基于BTPA-7的PSC设备的PCE值略低，分别为17.58％（对于spiro-OMeTAD为18.88％）和11.90％（对于spiro-OMeTAD为13.25％）。尽管如此，一个显着更高Ĵ _SC基于BTPA-7 PSC的实现，它从BTPA-7的较高空穴迁移率就产生了。另外，BTPA-7的相对疏水性最终增强了PSC器件的稳定性。低成本，更高的空穴迁移率，更高的T _g，令人满意的光伏性能以及BTPA-7出色的器件稳定性可以用作PSC中spiro-OMeTAD的替代品。