Multi‐Metal Nanocluster Assisted Cu‐Ga‐Sn Tri‐Doping for Enhanced Photoelectrochemical Water Splitting of BiVO4 Film,Advanced Materials Interfaces

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Multi‐Metal Nanocluster Assisted Cu‐Ga‐Sn Tri‐Doping for Enhanced Photoelectrochemical Water Splitting of BiVO4 Film
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-02-26 , DOI: 10.1002/admi.202000016
Ruolin Hu ₁ , Xiao‐Li Wang ₁ , Jiaxu Zhang ₁ , Dandan Hu ₁ , Jin Wu ₁ , Rui Zhou ₁ , Liang Li ₂ , Mingde Li ₃ , Dong‐Sheng Li ₄ , Tao Wu ₁

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Cu‐Ga‐Sn tri‐doped BiVO₄ thin film is created by using a new multi‐metal chalcogenide molecular nanocluster as single‐source dopants. The modified BiVO₄ photoanode with optimal doping amount (denoted as BiVO₄‐CGS) shows the improved performance of photoelectrochemical (PEC) water splitting with a 220 mV cathodic shift in onset potential and photocurrent density of 2.5 mA cm⁻² at 1.23 V versus reversible hydrogen electrode, which is 2.8 times higher than that of pristine BiVO₄. The enhanced catalytic activity is attributed to the increased charge carrier density, the improved charge separation efficiency and the accelerated surface oxygen evolution reaction (OER) dynamics of photoelectrodes. It is noted that the doping method applied here demonstrates an effective approach in not only avoiding the problems of uneven distribution of multi‐dopants or phase separation occurring in regular method, but also implementing in‐situ multi‐metal doping in a simple way.

中文翻译：

多金属纳米簇辅助Cu-Ga-Sn三掺杂增强BiVO4薄膜的光电化学水分解

通过使用新型多金属硫族化物分子纳米团簇作为单源掺杂剂来创建Cu-Ga-Sn三掺杂BiVO ₄薄膜。具有最佳掺杂量的改性BiVO ₄光电阳极（表示为BiVO ₄ ‐CGS）显示出光电化学（PEC）水分解的性能提高，起始电势为220 mV阴极位移，而在1.23 V时光电流密度为2.5 mA cm ^-2可逆氢电极，比原始BiVO ₄高2.8倍。增强的催化活性归因于增加的电荷载流子密度，改善的电荷分离效率和加速的光电极表面氧析出反应（OER）动力学。值得注意的是，这里所应用的掺杂方法证明了一种有效的方法，它不仅避免了常规方法中多掺杂物分布不均或相分离的问题，而且还以简单的方式实现了原位多金属掺杂。

更新日期：2020-02-26

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