Abstract In this work, a vertical vapor deposition method was developed to grow SnSe single crystals. More than thirty single crystal particles were simultaneously obtained and the largest size could up to 15 × 15 × 10 mm3. The as-grown crystal is tested has nearly Sn: Se = 1: 1 stoichiometric ratio and demonstrates standard orthorhombic Pnma space group at room temperature. Electrical transport measurement shows the present SnSe single crystal has a largest electrical conductivity σ = 39.6 S cm−1 near Pnma- Cmcm phase transition temperature, and the maximum Seebeck coefficient S = 566 μVK-1 is taken place around 580 K. Thermal transport analysis implies SnSe single crystal exhibits a lowest total thermal conductivity ktot=0.44 Wm−1 K−1 near Pnma- Cmcm phase transition. Finally, it is calculated the figure of merit ZT has a largest value ∼1.0 around 800 K that implies SnSe single crystal is a promising middle- temperature TE material.

中文翻译：

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垂直气相沉积法生长 SnSe 单晶及其热电性能表征

摘要 在这项工作中，开发了一种垂直气相沉积方法来生长 SnSe 单晶。同时获得三十多个单晶颗粒，最大尺寸可达15×15×10 mm3。测试生长的晶体具有接近 Sn:Se = 1:1 的化学计量比，并在室温下显示标准正交 Pnma 空间群。电输运测量表明，目前的 SnSe 单晶在 Pnma-Cmcm 相变温度附近具有最大的电导率 σ = 39.6 S cm-1，最大的塞贝克系数 S = 566 μVK-1 发生在 580 K 附近。 热输运分析意味着 SnSe 单晶在 Pnma-Cmcm 相变附近表现出最低的总热导率 ktot=0.44 Wm-1 K-1。最后，计算出品质因数 ZT 具有最大值 ~1。