Abstract We report on a versatile technique for the synthesis of graphene on a Si /SiO2 (300 nm) substrate by laser ablation. A direct method for the synthesis of graphene in the liquid phase using a pulsed laser has added advantages. There is a possibility of employing various substrates without the involvement of defect inducing chemicals that are introduced during the transfer process of graphene films. Pulsed KrF laser at 248 nm with laser fluence between 2.5 J/cm2 to 3.75 J/cm2 was employed to obtain highly crystalline graphene layers from a commercially obtained graphite bar instead of expensive highly oriented pyrolytic graphite (HOPG). The crystalline quality was confirmed by selected area electron diffraction (SAED) pattern. The de-convolution of the 2D peak in the Raman spectrum suggests the existence of bilayer graphene. A systematic study on the Raman spectra of graphite target and the evolution of graphene is presented and discussed.

中文翻译：

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通过单步激光烧蚀工艺实现优质双层石墨烯

摘要 我们报告了一种通过激光烧蚀在 Si /SiO2 (300 nm) 衬底上合成石墨烯的通用技术。使用脉冲激光在液相中直接合成石墨烯的方法具有额外的优势。有可能在不涉及在石墨烯薄膜转移过程中引入的缺陷诱导化学品的情况下使用各种基板。采用 248 nm 脉冲 KrF 激光，激光能量密度在 2.5 J/cm2 至 3.75 J/cm2 之间，用于从商业获得的石墨棒而不是昂贵的高取向热解石墨 (HOPG) 获得高度结晶的石墨烯层。通过选区电子衍射 (SAED) 图案确认结晶质量。拉曼光谱中二维峰的去卷积表明双层石墨烯的存在。