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Paradoxical combination of saturable absorption and reverse-saturable absorption in plasmon semiconductor nanocrystals
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-02-25 , DOI: 10.1039/c9na00694j Xiangling Tian 1, 2 , Rongfei Wei 3 , Dandan Yang 1 , Jianrong Qiu 1, 4
Nanoscale Advances ( IF 4.6 ) Pub Date : 2020-02-25 , DOI: 10.1039/c9na00694j Xiangling Tian 1, 2 , Rongfei Wei 3 , Dandan Yang 1 , Jianrong Qiu 1, 4
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In heavily doped semiconductor nanocrystal systems, high-order nonlinearities including third-order nonlinearity and fifth-order nonlinearity can be tailored to manipulate light on the nanoscale due to the semiconductor intrinsic absorption and localized surface plasmon resonances. Here, by exploiting the nonlinear optical properties of broadly infrared plasmons in solution-processed aluminum-doped ZnO nanocrystals (AZO NCs) with a wide band-gap, we demonstrate that the competition between plasma ground-state bleaching (third-order nonlinearity) and three-photon absorption (fifth-order nonlinearity) is responsible for the transition between saturable absorption and reverse saturable absorption. Upon increasing the pump intensity, the third-order nonlinear coefficient decreases from −5.85 × 102 cm GW−1 to −7.89 × 10−10 cm GW−1, while the fifth-order nonlinear coefficient increases from 3.08 × 10−9 cm3 GW−2 to 15.8 cm3 GW−2. With aluminum-doped ZnO nanocrystals as a Q-switch, a pulsed fiber laser operating at the C band (optical communication band) was constructed. Furthermore, the relatively small temperature fluctuations (7.13 K) of the Q-switch indicate its application prospects in all-optical systems. Investigations on the intrinsic mechanism between high-order nonlinearity and the nonlinear absorption can promote the further development and applications of heavily doped oxide semiconductors in advanced nanophotonics.
中文翻译：
等离激元半导体纳米晶体中饱和吸收和反饱和吸收的矛盾组合
在重掺杂半导体纳米晶体系统中，由于半导体本征吸收和局域表面等离子体共振，可以定制包括三阶非线性和五阶非线性在内的高阶非线性，以在纳米尺度上操纵光。在这里，通过利用具有宽带隙的溶液处理的铝掺杂 ZnO 纳米晶体（AZO NC）中的宽红外等离子体激元的非线性光学特性，我们证明了等离子体基态漂白（三阶非线性）和三光子吸收（五阶非线性）是导致可饱和吸收和反饱和吸收之间转变的原因。随着泵浦强度的增加，三阶非线性系数从-5.85 × 10 2 cm GW -1减小到-7.89 × 10 -10 cm GW -1 ，而五阶非线性系数从3.08 × 10 -9 cm 增加3 GW -2至15.8 cm 3 GW -2 。以铝掺杂ZnO纳米晶作为Q开关，构建了工作在C波段（光通信波段）的脉冲光纤激光器。此外，Q开关相对较小的温度波动（7.13 K）表明了其在全光系统中的应用前景。 对高阶非线性和非线性吸收之间内在机制的研究可以促进重掺杂氧化物半导体在先进纳米光子学中的进一步发展和应用。
更新日期：2020-02-25
中文翻译：
等离激元半导体纳米晶体中饱和吸收和反饱和吸收的矛盾组合
在重掺杂半导体纳米晶体系统中，由于半导体本征吸收和局域表面等离子体共振，可以定制包括三阶非线性和五阶非线性在内的高阶非线性，以在纳米尺度上操纵光。在这里，通过利用具有宽带隙的溶液处理的铝掺杂 ZnO 纳米晶体（AZO NC）中的宽红外等离子体激元的非线性光学特性，我们证明了等离子体基态漂白（三阶非线性）和三光子吸收（五阶非线性）是导致可饱和吸收和反饱和吸收之间转变的原因。随着泵浦强度的增加，三阶非线性系数从-5.85 × 10 2 cm GW -1减小到-7.89 × 10 -10 cm GW -1 ，而五阶非线性系数从3.08 × 10 -9 cm 增加3 GW -2至15.8 cm 3 GW -2 。以铝掺杂ZnO纳米晶作为Q开关，构建了工作在C波段（光通信波段）的脉冲光纤激光器。此外，Q开关相对较小的温度波动（7.13 K）表明了其在全光系统中的应用前景。 对高阶非线性和非线性吸收之间内在机制的研究可以促进重掺杂氧化物半导体在先进纳米光子学中的进一步发展和应用。
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