We investigate the proximity effect in a heterostructure of the topological insulator (TI) ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ deposited on the high-temperature superconductor (HTSC) material ${\mathrm{Bi}}_2{\mathrm{Sr}}_2{\mathrm{CaCu}}_2{\mathrm{O}}_{8+\delta }$. The latter is described by the one-band Hubbard model and is treated with cluster dynamical mean field theory (CDMFT), the topological insulator (TI) layers being included via the CDMFT self-consistency loop. The penetration of superconductivity into the TI depends on the position of the Fermi level with respect to the TI gap. We illustrate the back action of the TI layer on the HTSC layer, in particular the gradual disappearance of Mott physics with increasing tunneling amplitude.

中文翻译：

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基于动态平均场理论的具有拓扑绝缘体的高Tc超导体异质结构中的邻近效应

我们研究拓扑绝缘体（TI）的异质结构中的邻近效应 ${双}_2{硒}_3$ 沉积在高温超导体（HTSC）材料上 ${双}_2{r}_2{\mathrm{钙铜}}_2{\mathrm{Ø}}_{8+\delta }$。后者由单带Hubbard模型描述，并用簇动态平均场理论（CDMFT）进行处理，拓扑绝缘体（TI）层通过CDMFT自洽回路包含在内。超导电性对TI的渗透取决于费米能级相对于TI间隙的位置。我们说明了TI层在HTSC层上的后退作用，特别是随着隧穿幅度的增加，Mott物理学逐渐消失。