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Seed‐Assisted Growth of Cast‐Mono Silicon for Photovoltaic Application: Challenges and Strategies
Solar RRL ( IF 6.0 ) Pub Date : 2020-02-25 , DOI: 10.1002/solr.201900486 Peng Wang 1, 2 , Can Cui 1 , Deren Yang 2 , Xuegong Yu 2
Solar RRL ( IF 6.0 ) Pub Date : 2020-02-25 , DOI: 10.1002/solr.201900486 Peng Wang 1, 2 , Can Cui 1 , Deren Yang 2 , Xuegong Yu 2
Affiliation
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Silicon has dominated the photovoltaic material market for a few decades. In contrast to perfectly crystallized Czochralski (CZ) silicon, casting multi‐crystalline silicon attracts much more attention due to its low cost and high throughput, which meets the increasing demands of the rapidly developing photovoltaic industry. However, the unavoidable appearance of crystallographic defects seriously limits the performance improvement of solar cells. In this Review, a general overview of the recent efforts in high‐quality casting silicon crystal techniques is provided, including the dendritic cast method, high‐performance multi‐crystalline silicon, and cast‐mono silicon. Then, special attention is focused on the seed‐assisted growth of cast‐mono silicon, which shares some of the most favorable features of high solar cell efficiency offered by well‐established CZ silicon and cost‐effectiveness of cast multi‐crystalline silicon. Nevertheless, this innovative growth technique facing a few challenges once impeded its mass scale production. The main issues concerning nucleation and growth control, extended defects as well as impurity contamination are addressed, which pave the way for this high‐potential technology in applications for high‐efficiency and low‐cost solar cells.
中文翻译：
用于光伏应用的单晶硅种子辅助生长：挑战和策略
硅已经在光伏材料市场上占据了主导地位数十年。与完全结晶的切克劳斯基（CZ）硅相反，铸造多晶硅由于其低成本和高产量而备受关注，可以满足快速发展的光伏产业不断增长的需求。然而，不可避免地出现晶体学缺陷严重地限制了太阳能电池的性能改进。在本综述中，概述了近期在高质量铸造硅晶体技术方面所做的工作，包括树状铸造方法，高性能多晶硅和铸造单晶硅。然后，将特别的注意力集中在铸造辅助硅的种子辅助生长上，它具有完善的CZ硅提供的高太阳能电池效率的某些最有利特征以及铸造多晶硅的成本效益。然而，这种创新的增长技术曾经面临着一些挑战，但曾经阻碍了其大规模生产。解决了与成核和生长控制，缺陷扩展和杂质污染有关的主要问题，这为在高效和低成本太阳能电池应用中使用这种高潜力技术铺平了道路。
更新日期：2020-02-25
中文翻译：
用于光伏应用的单晶硅种子辅助生长：挑战和策略
硅已经在光伏材料市场上占据了主导地位数十年。与完全结晶的切克劳斯基（CZ）硅相反，铸造多晶硅由于其低成本和高产量而备受关注，可以满足快速发展的光伏产业不断增长的需求。然而，不可避免地出现晶体学缺陷严重地限制了太阳能电池的性能改进。在本综述中，概述了近期在高质量铸造硅晶体技术方面所做的工作，包括树状铸造方法，高性能多晶硅和铸造单晶硅。然后，将特别的注意力集中在铸造辅助硅的种子辅助生长上，它具有完善的CZ硅提供的高太阳能电池效率的某些最有利特征以及铸造多晶硅的成本效益。然而，这种创新的增长技术曾经面临着一些挑战，但曾经阻碍了其大规模生产。解决了与成核和生长控制，缺陷扩展和杂质污染有关的主要问题，这为在高效和低成本太阳能电池应用中使用这种高潜力技术铺平了道路。
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