Abstract Sapphire-supported hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these wafer-scale films are potential candidates for real device applications, they exhibit wrinkling. The wrinkles are a key signature of strain distribution in the films. We utilized Raman imaging to study the residual strain distribution in the wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness is observed and explained. An empirical relation is proposed for estimating the wrinkle mediated strain relaxation from the morphology of the films. Furthermore, we show that the residual strain can be partially released by the delamination of the films.

中文翻译：

---

褶皱 hBN 薄膜的应变分布

摘要 不同厚度的蓝宝石支持的 hBN 薄膜是使用金属有机气相外延技术通过遵循流动调制方案生长的。尽管这些晶圆级薄膜是实际设备应用的潜在候选者，但它们会起皱。皱纹是薄膜中应变分布的关键特征。我们利用拉曼成像来研究起皱的 hBN 薄膜中的残余应变分布。观察并解释了随着层厚度的增加薄膜中总压缩应变的增加。提出了一种经验关系，用于从薄膜的形态估计皱纹介导的应变松弛。此外，我们表明残余应变可以通过薄膜的分层来部分释放。