Recently, a major challenge in the adoption of wide bandgap semiconductors for power electronic applications is the need to trade device performance for device safety. In this article, methods for predicting gate voltage overshoot in normally-OFF gallium nitride (GAN) high electron mobility transistors (HEMTs) are derived in order to deliver optimal device performance. Two models are proposed; a simple, yet less accurate second order model and a complex, yet more accurate fourth order model. These models allow for the calculation of gate resistances necessary for a desired amount of gate voltage overshoot. The nonlinear capacitances of the device are considered in the analysis. The models are validated with an experimental double-pulse tester. These newly developed models allow design engineers to extract the best possible performance of commercially available GaN devices while keeping the devices in their safe-operating region.

中文翻译：

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预测常关GaN HEMT的导通过冲的分析模型

近来，在用于电力电子应用的宽带隙半导体中，主要的挑战是需要为了器件安全而牺牲器件性能。在本文中，推导了预测常关型氮化镓（GAN）高电子迁移率晶体管（HEMT）中栅极电压过冲的方法，以提供最佳的器件性能。提出了两种模型；一个简单但准确度较低的二阶模型和一个复杂但准确度较高的四阶模型。这些模型允许计算所需的栅极电压过冲所需的栅极电阻。分析中考虑了器件的非线性电容。该模型已通过实验性双脉冲测试仪进行了验证。