Commercial enhancement-mode gallium nitride (GaN) HEMTs device is a superior candidate for high-frequency power electronics applications. However, GaN power devices have a unique dynamic R _DS,ON problem which increases the conduction loss of the converter during operation. In this article, the temperature-dependent dynamic R _DS,ON at high frequency is evaluated experimentally for the first time using the double-pulse test (DPT) and multiple-pulse test (MPT) techniques. Different temperature-dependent dynamic R _DS,ON characteristics between the DPT and the MPT at high temperatures are investigated. The significance of the dynamic R _DS,ON 's temperature dependence is important since GaN devices are typically operating at elevated temperatures. The results suggest that the traditional wafer-level test method using one pulse or two pulses and the MPT without heating consideration or at lower pulse frequency may not be sufficient to evaluate the dynamic R _DS,ON effect. Combined with high-frequency, high-voltage, and high-current stress, high operating temperatures result in severe R _DS,ON degradation; hence, there is a diminished return on operating the devices at high temperatures.

中文翻译：

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温度相关动态的评估与分析 $ R _ {{{\ mathrm {DS}}}，{{\ mathrm {ON}}}} $ 高频工作的GaN功率器件的制造

商业增强型氮化镓（GaN）HEMT器件是高频电力电子应用的绝佳选择。但是，GaN功率器件具有独特的动态R _DS，ON问题，这会增加转换器在工作期间的传导损耗。在本文中，首次使用双脉冲测试（DPT）和多脉冲测试（MPT）技术对高频下与温度相关的动态R _DS，ON进行了实验评估。研究了高温下DPT和MPT之间随温度变化的动态R _DS，ON特性。动态R _{DS，ON的意义} 由于GaN器件通常在高温下工作，因此温度依赖性很重要。结果表明，使用一个或两个脉冲和MPT而不考虑加热或在较低脉冲频率下进行的传统晶圆级测试方法可能不足以评估动态R _DS，ON效应。高工作温度与高频，高压和高电流应力相结合，会导致严重的R _DS，ON退化；因此，在高温下操作设备的回报会减少。