SiC merged p-i-n Schottky (MPS) diodes have great potential in the construction of multiple power electronic circuits for their excellent static and dynamic characteristics. The ultrafast switching speed is unfortunately accompanied by undesirable parasitic oscillations, which have direct impact on the stability and reliability of these circuits. The wide use of SiC diodes is still limited by their uncertain reliability and a comprehensive diode physical model, which can be used to describe the device characteristics, including parasitic oscillations during reverse recovery, is still missing for the device safe operation. In this article, an accurate dynamic physical model based on the lumped-charge technique which can accurately estimate the switching oscillations is first developed for an SiC MPS diode considering all parasitic elements. Furthermore, the original static model is improved and many important semiconductor physical phenomenon are also included. In the end, simulation and experiments are carried out by a CETC WCSD60D330F19P SiC MPS diode to verify the proposed model.

中文翻译：

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SiC MPS二极管及其寄生振荡的分析与建模

SiC合并引脚肖特基（MPS）二极管具有出色的静态和动态特性，在多电源电子电路的构造中具有巨大的潜力。不幸的是，超快的开关速度伴随着不良的寄生振荡，这些寄生振荡直接影响这些电路的稳定性和可靠性。SiC二极管的广泛使用仍然受到不确定性的可靠性的限制，并且对于器件安全操作而言，仍然缺少可用来描述器件特性（包括反向恢复期间的寄生振荡）的全面二极管物理模型。在本文中，首先针对集成了所有寄生元件的SiC MPS二极管，开发了一种基于集总电荷技术的精确动态物理模型，该模型可以准确估计开关振荡。此外，原始静态模型得到改善，并且还包括许多重要的半导体物理现象。最后，通过CETC WCSD60D330F19P SiC MPS二极管进行了仿真和实验，以验证所提出的模型。